rectron semiconductor technical specification features * ideal for surface mounted applications* low leakage current * metallurgically bonded construction * mounting position: any * weight: 0.057 gram * epoxy : device has ul flammability classification 94v-0 maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load.for capacitive load, derate current by 20%. FFM101W thru ffm107w smx maximum ratings (at t a = 25 o c unless otherwise noted) surface mount voltage range 50 to 1000 volts current 1.0 ampere fast recovery silicon rectifier electrical characteristics (at t a = 25 o c unless otherwise noted) notes : 1. measured at 1.0 mhz and applied average voltage of 4.0vdc 2. thermal resistance junction to terminal 6.0mm 2 copper pads to each terminal. 3. thermal resistance junction to ambient, 6.0mm 2 copper pads to each terminal. 4. test conditions: i f = 0.5a, i r = -1.0a, i rr = -0.25a dimensions in inches and (millimeters) 2005-10 ratings maximum recurrent peak reverse voltage maximum rms voltagemaximum dc blocking voltage maximum average forward rectified current at t a = 55 o c peak forward surge current 8.3 ms single half sine-wavesuperimposed on rated load (jedec method) typical junction capacitance (note 1) operating and storage temperature range symbol v rrm v dc i o i fsm c j t j , t stg v rms amps 1.0 30 70 -55 to + 150 0 c/w pf 0 c units voltsvolts maximum thermal resistance (note 2) r jl FFM101W ffm103w ffm102w ffm104w ffm106w ffm105w ffm107w 50 100 200 400 600 800 1000 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 30 volts amps 15 0 c/w (note 3) r ja characteristics maximum reverse recovery time (note 4) v f symbol i r trr 1.3 50 100 uamps uamps nsec maximum full load reverse current,full cycle average at t a = 25 o c maximum forward voltage at 1.0a dc volts units maximum dc reverse current at rated dc blocking voltage @t a = 25 o c @t a = 125 o c FFM101W ffm103w ffm102w ffm104w ffm106w ffm105w ffm107w 5.0 150 250 500 uamps mechanical data 5.fully rohs compliant,100% sn plating(pb-free). .209 (5.31).185 (4.70) .091 (2.31).067 (1.70) .110 (2.79).086 (2.18) .011 (0.28).007 (0.18) .180 (4.57).160 (4.06) .059 (1.50).035 (0.89) .010 (0.25).008 (0.20) .071 (1.80).051 (1.30) downloaded from: http:///
rectron rating and characteristic curves ( FFM101W thru ffm107w ) junction capacitance, ( pf ) fig. 6 - typical junction capacitance reverse voltage, ( v ) 200100 6040 20 10 64 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 t j = 25 fig. 2 - maximum non-repetitive forward forward surge current, (a) number of cycles at 60hz surge current 124 6 8 10 20 40 60 80100 5040 30 20 10 0 8.3ms single half sine-wave(jeded method) trr +0.5a 0 -0.25a -1.0a 1cm set time base for50/100 ns/cm fig. 5 - test circuit diagram and reverse recovery 50noninductive 10noninductive d.u.t 25 vdc(approx) ( - ) ( - ) ( + ) ( + ) 1 non-inductive oscilloscope (note 1) pulse generator (note 2) notes: 1 rise time = 7ns max. input impedance = 1 megohm. 22 pf. 2. rise time = 10ns max. source impedance = 50 ohms. time characteristic fig. 1 - typical forward current average forward current, (a) ambient temperature, ( ) derating curve 1.0 .8.6 .4 .2 0 0 25 50 75 100 125 150 175 single phasehalf wave 60hz resistive or inductive load t j = 100 t j = 25 fig. 3 - typical reverse characteristics instantaneous reverse current, (ua) percent of rated peak reverse voltage, (%) 0 20 40 60 80 100 120 140 .01 .04 .1 .4 10 1.0 4 fig. 4 - typical instantaneous forward instantaneous forward current, (a) instantaneous forward voltage, (v) t j = 25 pulse width = 300us1% duty cycle .6 .8 1.0 1.2 1.4 2010 1.0 .1 .01 characteristics downloaded from: http:///
mounting pad layout rectron dimensions in inches and (millimeters) 0.071 min.(1.80 min.) 0.052 min.(1.32 min.) 0.220 0.094 max.(2.38 max.) (5.58) ref downloaded from: http:///
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